WMJ220N20HG3 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 328A; 329W; TO247-3
Case: TO247-3
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 36nC
On-state resistance: 21mΩ
Drain current: 82A
Power dissipation: 329W
Pulsed drain current: 328A
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 328A; 329W; TO247-3
Case: TO247-3
Mounting: THT
Gate-source voltage: ±20V
Gate charge: 36nC
On-state resistance: 21mΩ
Drain current: 82A
Power dissipation: 329W
Pulsed drain current: 328A
Drain-source voltage: 200V
Kind of package: tube
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
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Technische Details WMJ220N20HG3 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 328A; 329W; TO247-3, Case: TO247-3, Mounting: THT, Gate-source voltage: ±20V, Gate charge: 36nC, On-state resistance: 21mΩ, Drain current: 82A, Power dissipation: 329W, Pulsed drain current: 328A, Drain-source voltage: 200V, Kind of package: tube, Kind of channel: enhancement, Polarisation: unipolar, Type of transistor: N-MOSFET.