WMJ3N120D1 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 156.2W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 22.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 156.2W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 22.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 49+ | 1.47 EUR |
| 65+ | 1.1 EUR |
| 84+ | 0.86 EUR |
| 88+ | 0.82 EUR |
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Technische Details WMJ3N120D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 1.2kV, Drain current: 3A, Pulsed drain current: 12A, Power dissipation: 156.2W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 6.3Ω, Mounting: THT, Gate charge: 22.2nC, Kind of package: tube, Kind of channel: enhancement.