Suchergebnisse für "wmj3n120d1" : 2
Art der Ansicht :
Mindestbestellmenge: 39
Im Einkaufswagen
Stück im Wert von UAH
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WMJ3N120D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 156.2W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: THT Gate charge: 22.2nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 261 Stücke: Lieferzeit 14-21 Tag (e) |
|
| WMJ3N120D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 156.2W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 22.2nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 156.2W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: THT
Gate charge: 22.2nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 1.84 EUR |
| 49+ | 1.47 EUR |
| 65+ | 1.1 EUR |
| 84+ | 0.86 EUR |
| 88+ | 0.82 EUR |