WMJ3N150D1 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
Anzahl je Verpackung: 1 Stücke
auf Bestellung 207 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 2.62 EUR |
| 35+ | 2.09 EUR |
| 46+ | 1.57 EUR |
| 52+ | 1.4 EUR |
| 120+ | 1.32 EUR |
| 300+ | 1.24 EUR |
| 900+ | 1.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMJ3N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W, Case: TO247-3, Mounting: THT, Kind of package: tube, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 40nC, On-state resistance: 5.7Ω, Drain current: 3A, Pulsed drain current: 12A, Gate-source voltage: ±30V, Power dissipation: 125W, Drain-source voltage: 1.5kV, Kind of channel: enhancement, Technology: WMOS™ D1, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMJ3N150D1 nach Preis ab 1.32 EUR bis 2.62 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
WMJ3N150D1 | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W Case: TO247-3 Mounting: THT Kind of package: tube Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 40nC On-state resistance: 5.7Ω Drain current: 3A Pulsed drain current: 12A Gate-source voltage: ±30V Power dissipation: 125W Drain-source voltage: 1.5kV Kind of channel: enhancement Technology: WMOS™ D1 |
auf Bestellung 207 Stücke: Lieferzeit 14-21 Tag (e) |
|