WMJ3N150D1 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W
Case: TO247-3
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
auf Bestellung 217 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 2.82 EUR |
| 32+ | 2.25 EUR |
| 43+ | 1.69 EUR |
| 55+ | 1.32 EUR |
| 58+ | 1.24 EUR |
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Technische Details WMJ3N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 125W, Case: TO247-3, Mounting: THT, Kind of package: tube, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 40nC, On-state resistance: 5.7Ω, Drain current: 3A, Pulsed drain current: 12A, Gate-source voltage: ±30V, Power dissipation: 125W, Drain-source voltage: 1.5kV, Kind of channel: enhancement, Technology: WMOS™ D1.