WMJ4N150D1 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Mounting: THT
Drain current: 4A
On-state resistance: 5.4Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 41nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 16A
Case: TO247-3
Drain-source voltage: 1.5kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Mounting: THT
Drain current: 4A
On-state resistance: 5.4Ω
Type of transistor: N-MOSFET
Power dissipation: 125W
Polarisation: unipolar
Kind of package: tube
Gate charge: 41nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 16A
Case: TO247-3
Drain-source voltage: 1.5kV
auf Bestellung 268 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 2.83 EUR |
| 32+ | 2.26 EUR |
| 43+ | 1.7 EUR |
| 55+ | 1.32 EUR |
| 58+ | 1.24 EUR |
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Technische Details WMJ4N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W, Mounting: THT, Drain current: 4A, On-state resistance: 5.4Ω, Type of transistor: N-MOSFET, Power dissipation: 125W, Polarisation: unipolar, Kind of package: tube, Gate charge: 41nC, Technology: WMOS™ D1, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 16A, Case: TO247-3, Drain-source voltage: 1.5kV.