WMJ4N150D1 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W
Mounting: THT
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Case: TO247-3
Kind of package: tube
Polarisation: unipolar
Gate charge: 41nC
Drain current: 4A
On-state resistance: 5.4Ω
Pulsed drain current: 16A
Gate-source voltage: ±30V
Power dissipation: 125W
Drain-source voltage: 1.5kV
| Anzahl | Preis |
|---|---|
| 28+ | 2.62 EUR |
| 35+ | 2.09 EUR |
| 46+ | 1.57 EUR |
| 52+ | 1.4 EUR |
| 120+ | 1.32 EUR |
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Technische Details WMJ4N150D1 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 125W, Mounting: THT, Kind of channel: enhancement, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Case: TO247-3, Kind of package: tube, Polarisation: unipolar, Gate charge: 41nC, Drain current: 4A, On-state resistance: 5.4Ω, Pulsed drain current: 16A, Gate-source voltage: ±30V, Power dissipation: 125W, Drain-source voltage: 1.5kV.