WMJ69N30DMH WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 383nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 568W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 383nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 17 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 6.05 EUR |
| 13+ | 5.75 EUR |
| 15+ | 4.85 EUR |
| 16+ | 4.58 EUR |
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Technische Details WMJ69N30DMH WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 300V; 65A; Idm: 260A; 568W; TO247-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 300V, Drain current: 65A, Pulsed drain current: 260A, Power dissipation: 568W, Case: TO247-3, Gate-source voltage: ±20V, On-state resistance: 55mΩ, Mounting: THT, Gate charge: 383nC, Kind of package: tube, Kind of channel: enhancement.