WMJ80N60F2 WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 45A; Idm: 245A; 410W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 45A, Power dissipation: 410W, Case: TO247-3, On-state resistance: 44mΩ, Mounting: THT, Gate charge: 103nC, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 245A, Technology: WMOS™ F2, Gate-source voltage: ±30V.