WMJ80N65F2 WAYON
Hersteller: WAYONCategory: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 245A
Power dissipation: 410W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 26.2nC
Kind of package: tube
Kind of channel: enhanced
Reverse recovery time: 190ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 149 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 15.67 EUR |
| 11+ | 6.78 EUR |
| 12+ | 6.41 EUR |
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Technische Details WMJ80N65F2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W, Type of transistor: N-MOSFET, Technology: WMOS™ F2, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 45A, Pulsed drain current: 245A, Power dissipation: 410W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 37mΩ, Mounting: THT, Gate charge: 26.2nC, Kind of package: tube, Kind of channel: enhanced, Reverse recovery time: 190ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMJ80N65F2 nach Preis ab 6.41 EUR bis 15.67 EUR
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WMJ80N65F2 | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 45A; Idm: 245A; 410W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 245A Power dissipation: 410W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 37mΩ Mounting: THT Gate charge: 26.2nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 190ns |
auf Bestellung 149 Stücke: Lieferzeit 14-21 Tag (e) |
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