WMJ80R350S WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: WMOS™ S
Gate charge: 31nC
On-state resistance: 0.33Ω
Drain current: 8.4A
Gate-source voltage: ±30V
Pulsed drain current: 56A
Power dissipation: 183W
Drain-source voltage: 800V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: WMOS™ S
Gate charge: 31nC
On-state resistance: 0.33Ω
Drain current: 8.4A
Gate-source voltage: ±30V
Pulsed drain current: 56A
Power dissipation: 183W
Drain-source voltage: 800V
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 6.52 EUR |
| 14+ | 5.22 EUR |
| 23+ | 3.2 EUR |
| 24+ | 3.03 EUR |
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Technische Details WMJ80R350S WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W, Kind of package: tube, Case: TO247-3, Kind of channel: enhancement, Mounting: THT, Type of transistor: N-MOSFET, Polarisation: unipolar, Technology: WMOS™ S, Gate charge: 31nC, On-state resistance: 0.33Ω, Drain current: 8.4A, Gate-source voltage: ±30V, Pulsed drain current: 56A, Power dissipation: 183W, Drain-source voltage: 800V.