WMJ80R350S WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: WMOS™ S
Gate charge: 31nC
On-state resistance: 0.33Ω
Drain current: 8.4A
Gate-source voltage: ±30V
Pulsed drain current: 56A
Power dissipation: 183W
Drain-source voltage: 800V
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: WMOS™ S
Gate charge: 31nC
On-state resistance: 0.33Ω
Drain current: 8.4A
Gate-source voltage: ±30V
Pulsed drain current: 56A
Power dissipation: 183W
Drain-source voltage: 800V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 6.52 EUR |
| 14+ | 5.22 EUR |
| 23+ | 3.2 EUR |
| 24+ | 3.03 EUR |
| 900+ | 2.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMJ80R350S WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W, Kind of package: tube, Case: TO247-3, Kind of channel: enhancement, Mounting: THT, Type of transistor: N-MOSFET, Polarisation: unipolar, Technology: WMOS™ S, Gate charge: 31nC, On-state resistance: 0.33Ω, Drain current: 8.4A, Gate-source voltage: ±30V, Pulsed drain current: 56A, Power dissipation: 183W, Drain-source voltage: 800V, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMJ80R350S nach Preis ab 3.03 EUR bis 6.52 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
WMJ80R350S | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 800V; 8.4A; Idm: 56A; 183W Kind of package: tube Case: TO247-3 Kind of channel: enhancement Mounting: THT Type of transistor: N-MOSFET Polarisation: unipolar Technology: WMOS™ S Gate charge: 31nC On-state resistance: 0.33Ω Drain current: 8.4A Gate-source voltage: ±30V Pulsed drain current: 56A Power dissipation: 183W Drain-source voltage: 800V |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
|