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WMJ85N20JN WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EBCA25C8D0E0DF&compId=WMx85N20JN.pdf?ci_sign=8a36d449d26d3e5a72bcbacd22517098dc69a3d2 Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 160ns
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Technische Details WMJ85N20JN WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO247-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 50A, Pulsed drain current: 240A, Power dissipation: 180W, Case: TO247-3, Gate-source voltage: ±20V, On-state resistance: 13.5mΩ, Mounting: THT, Gate charge: 21nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 160ns.