WMJ90N65F2 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 50A; Idm: 295A; 430W
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 295A
Drain-source voltage: 650V
Drain current: 50A
Gate charge: 142nC
On-state resistance: 33mΩ
Power dissipation: 430W
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Technology: WMOS™ F2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 50A; Idm: 295A; 430W
Mounting: THT
Type of transistor: N-MOSFET
Polarisation: unipolar
Pulsed drain current: 295A
Drain-source voltage: 650V
Drain current: 50A
Gate charge: 142nC
On-state resistance: 33mΩ
Power dissipation: 430W
Gate-source voltage: ±30V
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Technology: WMOS™ F2
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 23.28 EUR |
| 8+ | 9.45 EUR |
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Technische Details WMJ90N65F2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 50A; Idm: 295A; 430W, Mounting: THT, Type of transistor: N-MOSFET, Polarisation: unipolar, Pulsed drain current: 295A, Drain-source voltage: 650V, Drain current: 50A, Gate charge: 142nC, On-state resistance: 33mΩ, Power dissipation: 430W, Gate-source voltage: ±30V, Kind of package: tube, Case: TO247-3, Kind of channel: enhancement, Technology: WMOS™ F2.