WMJ90N65F2 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 50A; Idm: 295A; 430W
Mounting: THT
Drain-source voltage: 650V
Drain current: 50A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 430W
Polarisation: unipolar
Kind of package: tube
Gate charge: 142nC
Technology: WMOS™ F2
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 295A
Case: TO247-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 50A; Idm: 295A; 430W
Mounting: THT
Drain-source voltage: 650V
Drain current: 50A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 430W
Polarisation: unipolar
Kind of package: tube
Gate charge: 142nC
Technology: WMOS™ F2
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 295A
Case: TO247-3
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 24.15 EUR |
| 7+ | 10.35 EUR |
| 8+ | 9.78 EUR |
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Technische Details WMJ90N65F2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 50A; Idm: 295A; 430W, Mounting: THT, Drain-source voltage: 650V, Drain current: 50A, On-state resistance: 33mΩ, Type of transistor: N-MOSFET, Power dissipation: 430W, Polarisation: unipolar, Kind of package: tube, Gate charge: 142nC, Technology: WMOS™ F2, Kind of channel: enhancement, Gate-source voltage: ±30V, Pulsed drain current: 295A, Case: TO247-3.