WMJ90R260S WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Mounting: THT
Technology: WMOS™ S
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39.5nC
On-state resistance: 0.26Ω
Drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 310W
Pulsed drain current: 50A
Drain-source voltage: 900V
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W
Mounting: THT
Technology: WMOS™ S
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39.5nC
On-state resistance: 0.26Ω
Drain current: 10A
Gate-source voltage: ±30V
Power dissipation: 310W
Pulsed drain current: 50A
Drain-source voltage: 900V
Kind of package: tube
Case: TO247-3
Kind of channel: enhancement
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Technische Details WMJ90R260S WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 10A; Idm: 50A; 310W, Mounting: THT, Technology: WMOS™ S, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 39.5nC, On-state resistance: 0.26Ω, Drain current: 10A, Gate-source voltage: ±30V, Power dissipation: 310W, Pulsed drain current: 50A, Drain-source voltage: 900V, Kind of package: tube, Case: TO247-3, Kind of channel: enhancement.