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WMJ93N20JN WAYON

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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 408A; 290W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 82A
Pulsed drain current: 408A
Power dissipation: 290W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 165ns

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Technische Details WMJ93N20JN WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 408A; 290W; TO247-3, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 82A, Pulsed drain current: 408A, Power dissipation: 290W, Case: TO247-3, Gate-source voltage: ±20V, On-state resistance: 8.6mΩ, Mounting: THT, Gate charge: 98nC, Kind of package: tube, Kind of channel: enhancement, Reverse recovery time: 165ns.