WMJ99N60F2 WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 60A; Idm: 350A; 460W, Type of transistor: N-MOSFET, Technology: WMOS™ F2, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 60A, Pulsed drain current: 350A, Power dissipation: 460W, Case: TO247-3, Gate-source voltage: ±30V, On-state resistance: 25.5mΩ, Mounting: THT, Gate charge: 174nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.