WMK072N12LG2 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 108A; Idm: 432A; 173.6W
Mounting: THT
Drain-source voltage: 120V
Drain current: 108A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 173.6W
Polarisation: unipolar
Kind of package: tube
Gate charge: 52.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 432A
Case: TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 108A; Idm: 432A; 173.6W
Mounting: THT
Drain-source voltage: 120V
Drain current: 108A
On-state resistance: 7mΩ
Type of transistor: N-MOSFET
Power dissipation: 173.6W
Polarisation: unipolar
Kind of package: tube
Gate charge: 52.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 432A
Case: TO220-3
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 44+ | 1.64 EUR |
| 46+ | 1.57 EUR |
| 50+ | 1.43 EUR |
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Technische Details WMK072N12LG2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 108A; Idm: 432A; 173.6W, Mounting: THT, Drain-source voltage: 120V, Drain current: 108A, On-state resistance: 7mΩ, Type of transistor: N-MOSFET, Power dissipation: 173.6W, Polarisation: unipolar, Kind of package: tube, Gate charge: 52.5nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 432A, Case: TO220-3.