WMK110N20HG2 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 125A
Pulsed drain current: 500A
Power dissipation: 347.2W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Gate charge: 73.8nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 36 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 5.83 EUR |
| 16+ | 4.55 EUR |
| 17+ | 4.3 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMK110N20HG2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 125A; Idm: 500A; 347.2W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 125A, Pulsed drain current: 500A, Power dissipation: 347.2W, Case: TO220-3, Gate-source voltage: ±20V, On-state resistance: 11mΩ, Mounting: THT, Gate charge: 73.8nC, Kind of package: tube, Kind of channel: enhancement.