Produkte > WAYON > WMK26N65FD
WMK26N65FD

WMK26N65FD WAYON


WMx26N65FD.pdf Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details WMK26N65FD WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO220-3, Type of transistor: N-MOSFET, Technology: WMOS™ FD, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 20A, Power dissipation: 147W, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 0.2Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhanced, Heatsink thickness: 1.2...1.45mm, Anzahl je Verpackung: 1 Stücke.

Weitere Produktangebote WMK26N65FD

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
WMK26N65FD WMK26N65FD Hersteller : WAYON WMx26N65FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 20A; 147W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: 1.2...1.45mm
Produkt ist nicht verfügbar