Produkte > WAYON > WMK4N65D1B

WMK4N65D1B WAYON

Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Power dissipation: 112W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 14.5nC

auf Bestellung 225 Stücke:

Lieferzeit 14-21 Tag (e)

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

Produktrezensionen

Produktbewertung abgeben

Technische Details WMK4N65D1B WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 4A, Power dissipation: 112W, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 2.2Ω, Mounting: THT, Kind of package: tube, Kind of channel: enhancement, Pulsed drain current: 16A, Gate charge: 14.5nC.