WMK4N65D1B WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 4A; Idm: 16A; 112W, Type of transistor: N-MOSFET, Technology: WMOS™ D1, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 4A, Pulsed drain current: 16A, Power dissipation: 112W, Case: TO220-3, Gate-source voltage: ±30V, On-state resistance: 2.2Ω, Mounting: THT, Gate charge: 14.5nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.