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WML11N65SR WAYON


Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Pulsed drain current: 19A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details WML11N65SR WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 28W, Type of transistor: N-MOSFET, Technology: WMOS™ SR, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 5.4A, Pulsed drain current: 19A, Power dissipation: 28W, Case: TO220FP, Gate-source voltage: ±30V, On-state resistance: 0.6Ω, Mounting: THT, Gate charge: 13.7nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.

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WML11N65SR Hersteller : WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 28W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Pulsed drain current: 19A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 13.7nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar