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WML20N20JN WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F08D4E1C9A40DF&compId=WMx20N20JN.pdf?ci_sign=6886e7aad16c3f4bf1c89aca1a1731089c2cdd43 Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 35W; TO220FP
Case: TO220FP
Mounting: THT
Reverse recovery time: 196ns
Drain-source voltage: 200V
Drain current: 117A
On-state resistance: 5.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Kind of package: tube
Gate charge: 188nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 620A
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Technische Details WML20N20JN WAYON

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 117A; Idm: 620A; 35W; TO220FP, Case: TO220FP, Mounting: THT, Reverse recovery time: 196ns, Drain-source voltage: 200V, Drain current: 117A, On-state resistance: 5.2mΩ, Type of transistor: N-MOSFET, Power dissipation: 35W, Polarisation: unipolar, Kind of package: tube, Gate charge: 188nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 620A.