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WMM83N25JN WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1FD091EC592A295D40DF&compId=WMx83N25JN.pdf?ci_sign=b15966b75598e13bd3061fc8270e665c05fbf019 Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain current: 31A
Gate-source voltage: ±20V
Power dissipation: 92W
Pulsed drain current: 145A
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 10nC
Reverse recovery time: 180ns
On-state resistance: 31mΩ
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Technische Details WMM83N25JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 31A; Idm: 145A; 92W; TO263, Case: TO263, Mounting: SMD, Kind of package: reel; tape, Drain current: 31A, Gate-source voltage: ±20V, Power dissipation: 92W, Pulsed drain current: 145A, Drain-source voltage: 250V, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 10nC, Reverse recovery time: 180ns, On-state resistance: 31mΩ.