WMM90R360S WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7.8A; Idm: 52A; 183W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7.8A
Pulsed drain current: 52A
Power dissipation: 183W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7.8A; Idm: 52A; 183W
Type of transistor: N-MOSFET
Technology: WMOS™ S
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 7.8A
Pulsed drain current: 52A
Power dissipation: 183W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details WMM90R360S WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; 7.8A; Idm: 52A; 183W, Type of transistor: N-MOSFET, Technology: WMOS™ S, Polarisation: unipolar, Drain-source voltage: 900V, Drain current: 7.8A, Pulsed drain current: 52A, Power dissipation: 183W, Case: TO263, Gate-source voltage: ±30V, On-state resistance: 0.34Ω, Mounting: SMD, Gate charge: 32nC, Kind of package: reel; tape, Kind of channel: enhancement.