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WMM93N20JN WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F0A49F5C2980DF&compId=WMx93N20JN.pdf?ci_sign=fcb60bb6fe1b943870e85ce5c04a68228d544155 Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 408A; 290W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 82A
Pulsed drain current: 408A
Power dissipation: 290W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 98nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 165ns
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Technische Details WMM93N20JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 82A; Idm: 408A; 290W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 200V, Drain current: 82A, Pulsed drain current: 408A, Power dissipation: 290W, Case: TO263, Gate-source voltage: ±20V, On-state resistance: 8.6mΩ, Mounting: SMD, Gate charge: 98nC, Kind of package: reel; tape, Kind of channel: enhancement, Reverse recovery time: 165ns.