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WMM93N25JN WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F00DD09896E0DF&compId=WMx93N25JN.pdf?ci_sign=4b79b07d3364aa4e7bbd19e7302d21def714173e Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO263
Case: TO263
Mounting: SMD
Kind of package: reel; tape
Drain current: 42A
Gate-source voltage: ±20V
Power dissipation: 180W
Pulsed drain current: 280A
Drain-source voltage: 250V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 21nC
Reverse recovery time: 190ns
On-state resistance: 17mΩ
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Technische Details WMM93N25JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 42A; Idm: 280A; 180W; TO263, Case: TO263, Mounting: SMD, Kind of package: reel; tape, Drain current: 42A, Gate-source voltage: ±20V, Power dissipation: 180W, Pulsed drain current: 280A, Drain-source voltage: 250V, Kind of channel: enhancement, Type of transistor: N-MOSFET, Polarisation: unipolar, Gate charge: 21nC, Reverse recovery time: 190ns, On-state resistance: 17mΩ.