WMO048NV6HG4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 90A; Idm: 360A; 71.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 71.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 90A; Idm: 360A; 71.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 90A
Pulsed drain current: 360A
Power dissipation: 71.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 78+ | 0.92 EUR |
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Technische Details WMO048NV6HG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 90A; Idm: 360A; 71.4W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 90A, Pulsed drain current: 360A, Power dissipation: 71.4W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 5.2mΩ, Mounting: SMD, Gate charge: 28.5nC, Kind of package: reel; tape, Kind of channel: enhancement.