Suchergebnisse für "wmo07n100c2" : 2
Art der Ansicht :
| Foto | Bezeichnung | Hersteller | Beschreibung |
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WMO07N100C2 | WAYON |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 65W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 1kV Drain current: 2.2A Pulsed drain current: 12A Power dissipation: 65W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 260ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WMO07N100C2 |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 65W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 260ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 65W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH