WMO09N20DMH WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252
Case: TO252
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 200V
Drain current: 9A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 80.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.1nC
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252
Case: TO252
Mounting: SMD
Gate-source voltage: ±20V
Pulsed drain current: 36A
Drain-source voltage: 200V
Drain current: 9A
On-state resistance: 0.35Ω
Type of transistor: N-MOSFET
Power dissipation: 80.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 19.1nC
Kind of channel: enhancement
auf Bestellung 297 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 231+ | 0.31 EUR |
| 257+ | 0.28 EUR |
| 297+ | 0.24 EUR |
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Technische Details WMO09N20DMH WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252, Case: TO252, Mounting: SMD, Gate-source voltage: ±20V, Pulsed drain current: 36A, Drain-source voltage: 200V, Drain current: 9A, On-state resistance: 0.35Ω, Type of transistor: N-MOSFET, Power dissipation: 80.6W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 19.1nC, Kind of channel: enhancement.