Suchergebnisse für "wmo09n25jn" : 1
Art der Ansicht :
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| WMO09N25JN | WAYON |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 4.2A; Idm: 21A; 31W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 4.2A Pulsed drain current: 21A Power dissipation: 31W Case: TO252 Gate-source voltage: ±20V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 3.9nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 75ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WMO09N25JN |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.2A; Idm: 21A; 31W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.2A
Pulsed drain current: 21A
Power dissipation: 31W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 75ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.2A; Idm: 21A; 31W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.2A
Pulsed drain current: 21A
Power dissipation: 31W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH