WMO09N25JN WAYON

Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.2A; Idm: 21A; 31W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.2A
Pulsed drain current: 21A
Power dissipation: 31W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 75ns
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Technische Details WMO09N25JN WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 250V; 4.2A; Idm: 21A; 31W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 250V, Drain current: 4.2A, Pulsed drain current: 21A, Power dissipation: 31W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 0.36Ω, Mounting: SMD, Gate charge: 3.9nC, Kind of package: reel; tape, Kind of channel: enhancement, Reverse recovery time: 75ns.