WMO119N12LG4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.9mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 65A
Pulsed drain current: 260A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 11.9mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 100+ | 0.72 EUR |
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Technische Details WMO119N12LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 120V; 65A; Idm: 260A; 96W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 120V, Drain current: 65A, Pulsed drain current: 260A, Power dissipation: 96W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 11.9mΩ, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement.