Produkte > WAYON > WMO20N20JN

WMO20N20JN WAYON

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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO252
Case: TO252
Mounting: SMD
Gate-source voltage: ±20V
Gate charge: 4.1nC
Reverse recovery time: 110ns
On-state resistance: 80mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 60A
Drain-source voltage: 200V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET

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Technische Details WMO20N20JN WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO252, Case: TO252, Mounting: SMD, Gate-source voltage: ±20V, Gate charge: 4.1nC, Reverse recovery time: 110ns, On-state resistance: 80mΩ, Drain current: 12A, Power dissipation: 59W, Pulsed drain current: 60A, Drain-source voltage: 200V, Kind of package: reel; tape, Kind of channel: enhancement, Polarisation: unipolar, Type of transistor: N-MOSFET.