Suchergebnisse für "wmo20p04t1" : 1
Art der Ansicht :
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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WMO20P04T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -20A; Idm: -80A; 27.8W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -20A Pulsed drain current: -80A Power dissipation: 27.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WMO20P04T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -20A; Idm: -80A; 27.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 27.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -20A; Idm: -80A; 27.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 27.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH