WMO25P06T1 WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 44.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 44.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 44.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 44.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 80+ | 0.89 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMO25P06T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 44.6W; TO252, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -25A, Pulsed drain current: -100A, Power dissipation: 44.6W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 40mΩ, Mounting: SMD, Gate charge: 17nC, Kind of package: reel; tape, Kind of channel: enhancement.