WMO35N06T1 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 140A; 44.6W; TO252
Mounting: SMD
Drain-source voltage: 60V
Drain current: 35A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 44.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 140A
Case: TO252
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 140A; 44.6W; TO252
Mounting: SMD
Drain-source voltage: 60V
Drain current: 35A
On-state resistance: 22mΩ
Type of transistor: N-MOSFET
Power dissipation: 44.6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 14.5nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 140A
Case: TO252
auf Bestellung 456 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 278+ | 0.26 EUR |
| 309+ | 0.23 EUR |
| 368+ | 0.19 EUR |
| 388+ | 0.18 EUR |
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Technische Details WMO35N06T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 140A; 44.6W; TO252, Mounting: SMD, Drain-source voltage: 60V, Drain current: 35A, On-state resistance: 22mΩ, Type of transistor: N-MOSFET, Power dissipation: 44.6W, Polarisation: unipolar, Kind of package: reel; tape, Gate charge: 14.5nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: 140A, Case: TO252.