Suchergebnisse für "wmo3n120d1" : 2
Art der Ansicht :
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| WMO3N120D1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A; 62.5W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 62.5W Case: TO252 Gate-source voltage: ±30V On-state resistance: 6.3Ω Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WMO3N120D1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH