WMO90N02T1 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 39W
Drain current: 90A
Pulsed drain current: 222A
Gate charge: 0.1µC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 39W
Drain current: 90A
Pulsed drain current: 222A
Gate charge: 0.1µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 442 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 265+ | 0.27 EUR |
| 348+ | 0.21 EUR |
| 394+ | 0.18 EUR |
| 442+ | 0.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMO90N02T1 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 20V, Case: TO252, Gate-source voltage: ±10V, On-state resistance: 4.5mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhancement, Power dissipation: 39W, Drain current: 90A, Pulsed drain current: 222A, Gate charge: 0.1µC, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMO90N02T1 nach Preis ab 0.16 EUR bis 0.54 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
WMO90N02T1 | Hersteller : WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Case: TO252 Gate-source voltage: ±10V On-state resistance: 4.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 39W Drain current: 90A Pulsed drain current: 222A Gate charge: 0.1µC |
auf Bestellung 442 Stücke: Lieferzeit 14-21 Tag (e) |
|