WMP06N80M3 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 2.5A; Idm: 14A; 50W
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 14A
Power dissipation: 50W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 2.5A; Idm: 14A; 50W
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.5A
Pulsed drain current: 14A
Power dissipation: 50W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Gate charge: 10.7nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
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Technische Details WMP06N80M3 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 2.5A; Idm: 14A; 50W, Type of transistor: N-MOSFET, Technology: WMOS™ M3, Polarisation: unipolar, Drain-source voltage: 800V, Drain current: 2.5A, Pulsed drain current: 14A, Power dissipation: 50W, Case: TO251, Gate-source voltage: ±30V, On-state resistance: 2Ω, Mounting: THT, Gate charge: 10.7nC, Kind of package: tube, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMP06N80M3
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WMP06N80M3 | Hersteller : WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 2.5A; Idm: 14A; 50W Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.5A Pulsed drain current: 14A Power dissipation: 50W Case: TO251 Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Gate charge: 10.7nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |