WMP119N10LG2 WAYON
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 220A; 65.8W; TO251
Case: TO251
Mounting: THT
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 13mΩ
Kind of channel: enhancement
Power dissipation: 65.8W
Drain current: 55A
Gate-source voltage: ±20V
Pulsed drain current: 220A
Drain-source voltage: 100V
Kind of package: tube
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 220A; 65.8W; TO251
Case: TO251
Mounting: THT
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 13mΩ
Kind of channel: enhancement
Power dissipation: 65.8W
Drain current: 55A
Gate-source voltage: ±20V
Pulsed drain current: 220A
Drain-source voltage: 100V
Kind of package: tube
Type of transistor: N-MOSFET
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 84+ | 0.86 EUR |
| 121+ | 0.59 EUR |
| 128+ | 0.56 EUR |
| 145+ | 0.5 EUR |
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Technische Details WMP119N10LG2 WAYON
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 220A; 65.8W; TO251, Case: TO251, Mounting: THT, Polarisation: unipolar, Gate charge: 20nC, On-state resistance: 13mΩ, Kind of channel: enhancement, Power dissipation: 65.8W, Drain current: 55A, Gate-source voltage: ±20V, Pulsed drain current: 220A, Drain-source voltage: 100V, Kind of package: tube, Type of transistor: N-MOSFET.