Produkte > WAYON > WMQ060N04LG2
WMQ060N04LG2

WMQ060N04LG2 WAYON


pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D956DFC941E0DF&compId=WMQ060N04LG2.pdf?ci_sign=c3f975e8a22fa63c801b842dd47a636e121952fc Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details WMQ060N04LG2 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 35A, Pulsed drain current: 200A, Power dissipation: 30W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 7.8mΩ, Mounting: SMD, Gate charge: 18nC, Kind of package: reel; tape, Kind of channel: enhancement.