WMQ25P04T1 WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 31.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 31.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 219+ | 0.33 EUR |
| 265+ | 0.27 EUR |
| 343+ | 0.21 EUR |
| 363+ | 0.2 EUR |
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Technische Details WMQ25P04T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -25A; Idm: -100A; 31.2W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -25A, Pulsed drain current: -100A, Power dissipation: 31.2W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 19mΩ, Mounting: SMD, Gate charge: 35nC, Kind of package: reel; tape, Kind of channel: enhancement.