WMQ30DP03TS WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -30A; Idm: -120A; 29W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -30A; Idm: -120A; 29W
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 203+ | 0.35 EUR |
| 247+ | 0.29 EUR |
| 313+ | 0.23 EUR |
| 332+ | 0.22 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMQ30DP03TS WAYON
Category: Multi channel transistors, Description: Transistor: P-MOSFET x2; unipolar; -30V; -30A; Idm: -120A; 29W, Type of transistor: P-MOSFET x2, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -30A, Pulsed drain current: -120A, Power dissipation: 29W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 20mΩ, Mounting: SMD, Gate charge: 20.5nC, Kind of package: reel; tape, Kind of channel: enhancement.