WMQ30N06TS WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 300+ | 0.24 EUR |
| 360+ | 0.2 EUR |
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Technische Details WMQ30N06TS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 30A, Pulsed drain current: 120A, Power dissipation: 34.7W, Case: PDFN3030-8, Gate-source voltage: ±20V, On-state resistance: 22mΩ, Mounting: SMD, Gate charge: 14.5nC, Kind of package: reel; tape, Kind of channel: enhancement.