
WMR140NV6LG4 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 9A
Gate charge: 14nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Pulsed drain current: 36A
Case: DFN2020-6
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 9A
Gate charge: 14nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Pulsed drain current: 36A
Case: DFN2020-6
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
139+ | 0.51 EUR |
343+ | 0.21 EUR |
410+ | 0.17 EUR |
435+ | 0.16 EUR |
500+ | 0.14 EUR |
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Technische Details WMR140NV6LG4 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6, Mounting: SMD, Type of transistor: N-MOSFET, Kind of package: reel; tape, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 9A, Gate charge: 14nC, On-state resistance: 14.5mΩ, Power dissipation: 2.1W, Gate-source voltage: ±20V, Pulsed drain current: 36A, Case: DFN2020-6, Kind of channel: enhancement.