WMS08P03T1 WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 332+ | 0.22 EUR |
| 472+ | 0.15 EUR |
| 527+ | 0.14 EUR |
| 625+ | 0.11 EUR |
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Technische Details WMS08P03T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -8A, Pulsed drain current: -40A, Power dissipation: 2.7W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 20mΩ, Mounting: SMD, Gate charge: 20nC, Kind of package: reel; tape, Kind of channel: enhancement.