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WMS08P03T1

WMS08P03T1 WAYON


Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 2.7W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -8A
On-state resistance: 20mΩ
Type of transistor: P-MOSFET
auf Bestellung 1000 Stücke:

Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
323+0.22 EUR
459+0.16 EUR
511+0.14 EUR
625+0.11 EUR
Mindestbestellmenge: 122
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Technische Details WMS08P03T1 WAYON

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8, Case: SOP8, Mounting: SMD, Kind of package: reel; tape, Power dissipation: 2.7W, Polarisation: unipolar, Gate charge: 20nC, Kind of channel: enhancement, Gate-source voltage: ±20V, Pulsed drain current: -40A, Drain-source voltage: -30V, Drain current: -8A, On-state resistance: 20mΩ, Type of transistor: P-MOSFET.