WMS090DNV6LG4 WAYON
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 12.5A; Idm: 50A; 3.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 12.5A; Idm: 50A; 3.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 185+ | 0.39 EUR |
| 205+ | 0.35 EUR |
| 246+ | 0.29 EUR |
| 260+ | 0.28 EUR |
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Technische Details WMS090DNV6LG4 WAYON
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 65V; 12.5A; Idm: 50A; 3.1W; SOP8, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 12.5A, Pulsed drain current: 50A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 12mΩ, Mounting: SMD, Gate charge: 22.1nC, Kind of package: reel; tape, Kind of channel: enhancement.