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WMS090NV6LG4 WAYON


WMS090NV6LG4.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 14.5A; Idm: 58A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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Technische Details WMS090NV6LG4 WAYON

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 65V; 14.5A; Idm: 58A; 3.1W; SOP8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 65V, Drain current: 14.5A, Pulsed drain current: 58A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 9mΩ, Mounting: SMD, Gate charge: 21.7nC, Kind of package: reel; tape, Kind of channel: enhancement.