WMS099N10LGS WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.2A; Idm: 48A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.2A
Pulsed drain current: 48A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 57.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.2A; Idm: 48A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.2A
Pulsed drain current: 48A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 57.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 90+ | 0.8 EUR |
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Technische Details WMS099N10LGS WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 8.2A; Idm: 48A; 3W; SOP8, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 8.2A, Pulsed drain current: 48A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 14mΩ, Mounting: SMD, Gate charge: 57.5nC, Kind of package: reel; tape, Kind of channel: enhancement.