WMS09P06TS WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; Idm: -34A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.5A
Pulsed drain current: -34A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; Idm: -34A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.5A
Pulsed drain current: -34A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 394 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 211+ | 0.34 EUR |
| 234+ | 0.31 EUR |
| 300+ | 0.24 EUR |
| 317+ | 0.23 EUR |
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Technische Details WMS09P06TS WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; Idm: -34A; 3.1W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -8.5A, Pulsed drain current: -34A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 23mΩ, Mounting: SMD, Gate charge: 59nC, Kind of package: reel; tape, Kind of channel: enhancement.