WMS119N10LG2 WAYON
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.5A; Idm: 38A; 3W; SOP8
Case: SOP8
Mounting: SMD
Polarisation: unipolar
Gate charge: 19.5nC
On-state resistance: 13mΩ
Kind of channel: enhancement
Power dissipation: 3W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 38A
Drain-source voltage: 100V
Kind of package: reel; tape
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.5A; Idm: 38A; 3W; SOP8
Case: SOP8
Mounting: SMD
Polarisation: unipolar
Gate charge: 19.5nC
On-state resistance: 13mΩ
Kind of channel: enhancement
Power dissipation: 3W
Drain current: 11.5A
Gate-source voltage: ±20V
Pulsed drain current: 38A
Drain-source voltage: 100V
Kind of package: reel; tape
Type of transistor: N-MOSFET
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 100+ | 0.72 EUR |
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Technische Details WMS119N10LG2 WAYON
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 11.5A; Idm: 38A; 3W; SOP8, Case: SOP8, Mounting: SMD, Polarisation: unipolar, Gate charge: 19.5nC, On-state resistance: 13mΩ, Kind of channel: enhancement, Power dissipation: 3W, Drain current: 11.5A, Gate-source voltage: ±20V, Pulsed drain current: 38A, Drain-source voltage: 100V, Kind of package: reel; tape, Type of transistor: N-MOSFET.