WMS11P04T1 WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; Idm: -42A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Pulsed drain current: -42A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; Idm: -42A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -10.5A
Pulsed drain current: -42A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 278+ | 0.26 EUR |
| 332+ | 0.22 EUR |
| 424+ | 0.17 EUR |
| 447+ | 0.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMS11P04T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -10.5A; Idm: -42A; 3.1W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -10.5A, Pulsed drain current: -42A, Power dissipation: 3.1W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 19mΩ, Mounting: SMD, Gate charge: 35nC, Kind of package: reel; tape, Kind of channel: enhancement.