WMS12P03T1 WAYON
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -45.8A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.5A
Pulsed drain current: -45.8A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -45.8A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.5A
Pulsed drain current: -45.8A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 487 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 281+ | 0.25 EUR |
| 338+ | 0.21 EUR |
| 358+ | 0.2 EUR |
| 451+ | 0.16 EUR |
| 477+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details WMS12P03T1 WAYON
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -45.8A; 3W; SOP8, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -11.5A, Pulsed drain current: -45.8A, Power dissipation: 3W, Case: SOP8, Gate-source voltage: ±20V, On-state resistance: 9.6mΩ, Mounting: SMD, Gate charge: 30nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote WMS12P03T1 nach Preis ab 0.15 EUR bis 0.57 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
WMS12P03T1 | Hersteller : WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -45.8A; 3W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -11.5A Pulsed drain current: -45.8A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 9.6mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 487 Stücke: Lieferzeit 14-21 Tag (e) |
|