Technische Details WMSC030H12B1P6T Ween
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A, Type of semiconductor module: MOSFET transistor, Semiconductor structure: transistor/transistor, Drain-source voltage: 1.2kV, Drain current: 53A, Topology: MOSFET half-bridge; NTC thermistor, Electrical mounting: Press-in PCB, On-state resistance: 30mΩ, Pulsed drain current: 100A, Power dissipation: 111W, Technology: SiC, Gate-source voltage: -4...18V, Mechanical mounting: screw.
Weitere Produktangebote WMSC030H12B1P6T
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
WMSC030H12B1P6T | Hersteller : WeEn Semiconductors |
 MOSFET Modules WMSC030H12B1P/WeEnPACK-B1/STANDARD MARKING*TRAY PACK,EPE OR BLISTER |
Produkt ist nicht verfügbar |
|
| WMSC030H12B1P6T | Hersteller : WeEn Semiconductors |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1.2kV; 53A; Press-in PCB; Idm: 100A Type of semiconductor module: MOSFET transistor Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 53A Topology: MOSFET half-bridge; NTC thermistor Electrical mounting: Press-in PCB On-state resistance: 30mΩ Pulsed drain current: 100A Power dissipation: 111W Technology: SiC Gate-source voltage: -4...18V Mechanical mounting: screw |
Produkt ist nicht verfügbar |